EPT300 - Enabling power technologies on 300mm wafers
EPT300 aims to develop and implement technology to achieve full-scale production of power devices on 300 mm wafers. The volume manufacturing benefits of 300 mm silicon wafer fabrication are well-established with regard to digital integrated circuits, but the ability to use them in the production of power semiconductor devices has so far eluded large-scale producers. This will place European fabs at the forefront of power semiconductor manufacturing worldwide and open up further employment opportunities both in the fabs and across the entire European electronics industry. EPT300 is a project funded by the ENIAC JU.
Major elements of the European Commission’s Europe 2020 strategy are the reduction of greenhouse gas emissions, energy efficiency and electro-mobility. A key enabler to realize these goals will be the production of power semiconductors designed and manufactured at low cost and in sufficient quantities in Europe with equipment and materials supplied by European companies.
The ENIAC JU project EPT300 will be a decisive step forward in the strengthening of Europe’s leading position in power semiconductor technologies and ‘More-than-Moore’ manufacturing capabilities. The fabrication of power semiconductor devices on 300 mm wafers in a leading European pilot line will require manufacturing excellence, cost competitiveness and challenging applications.
ETP300 aims to realise demonstrators on a pilot production line and to prove the readiness for large-scale manufacture in a fabrication environment based on selected products and technologies.
EPT300 objectives are
- Enhance the core competences of European companies in the development of technology for power semiconductors and the ability to manufacture at competitive cost in Europe
- Achieve best-in-class productivity in the fabrication of leading-edge power semiconductors while addressing advanced, energy-efficient applications for industrial and mobility purposes
- Develop the supply chain for the manufacture of leading-edge power semiconductor technologies in Europe.
Key project dates
Start: April 2012
Finish: March 2015 + Extension Sept 2015
Total eligible cost
€ 43,6 million